JANTX2N5237S Datasheet

IC型號(hào)：
JANTX2N5237S
PDF描述：
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 5A I(C) | TO-5VAR
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100.99KB
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上傳產(chǎn)品規(guī)格書(shū)

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 5 October 2002.

INCH-POUND

MIL-PRF-19500/394G

5 July 2002

SUPERSEDING

MIL-PRF-19500/394F

23 April 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S

JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage

transistors. Four levels of product assurance are provided for each encapsulated device type as specified in

MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (TO- 5) and figures 2 and 3 (JANHC and JANKC).

1.3 Maximum ratings.

Types

PT (1)

TA =

+25擄C

PT (2)

TC = +25擄C

VCBO

VCEO

VEBO

TSTG and

擄C

-65 to +200

胃JC

(max)

胃JA

(min)

5.0

V dc

100

150

200

V dc

120

170

V dc

A dc

擄C/mW

.020

擄C/mW

.175

2N4150, S

2N5237, S

2N5238, S

1.0

(1) Derate linearly 5.7 mW/擄C for T

> +25擄C.

(2) Derate linearly 50 mW/擄C for T

> +100擄C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

現(xiàn)有數(shù)量
0現(xiàn)貨查看交期
價(jià)格
100 : ￥195.09060散裝
系列
Military, MIL-PRF-19500/394
包裝
散裝
產(chǎn)品狀態(tài)
在售
晶體管類型
NPN
電流 - 集電極 (Ic)（最大值）
10 A
電壓 - 集射極擊穿（最大值）
120 V
不同?Ib、Ic 時(shí)?Vce 飽和壓降（最大值）
2.5V @ 1A，10A
電流 - 集電極截止（最大值）
10μA
不同?Ic、Vce?時(shí) DC 電流增益 (hFE)（最小值）
40 @ 5A，5V
功率 - 最大值
1 W
頻率 - 躍遷
-
工作溫度
-65°C ~ 200°C（TJ）
安裝類型
通孔
封裝/外殼
TO-205AD，TO-39-3 金屬罐
供應(yīng)商器件封裝
TO-39（TO-205AD）

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JANTX2N5237S Datasheet

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