The documentation and process conversion measures necessary to
comply with this document shall be completed by 4 April, 2002.
INCH-POUND
MIL-PRF-19500/396H
4 January 2002
SUPERSEDING
MIL-PRF-19500/396G
21 April 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
TYPES 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, AND 2N3765
JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two
levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1, 2N3762L and 2N3763L (TO-5), 2N3762 and 2N3763 (TO-39), 2N3764
and 2N3765 (TO - 46) and figure 2 (die) herein.
1.3 Maximum ratings.
Types
P
T
T
A
= +25擄C
W
V
CBO
V
CEO
V
EBO
I
C
T
OP
and T
STG
擄C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
R
胃
JC
擄C/W
60
60
60
60
88
88
V dc
40
40
60
60
40
60
V dc
40
40
60
60
40
60
V dc
5
5
5
5
5
5
A dc
1.5
1.5
1.5
1.5
1.5
1.5
2N3762
2N3762L
2N3763
2N3763L
2N3764
2N3765
1.0
1.0
1.0
1.0
0.5
0.5
(1)
(1)
(1)
(1)
(2)
(2)
(1) Derate linearly at 5.71 mW/擄C above T
A
= +25擄C.
(2) Derate linearly at 2.86 mW/擄C above T
A
= +25擄C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O.
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form
1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961