The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 30 September 1999.
INCH-POUND
MIL-PRF-19500/315F
30 June 1999
SUPERSEDING
MIL-S-19500/315E
10 March 1992
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPES 2N2880, 2N3749, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Four levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. Type 2N2880, see figure 1 (TO 鈥?59) and for type 2N3749, see figure 2 (TO 鈥?59).
1.3 Maximum ratings.
P
T
1/
T
A
= 25擄C
P
T
2/
V
CBO
T
C
= 100擄C
擄C
-65 to +200
V
CEO
V
EBO
I
C
I
B
T
STG
and T
OP
W
2
W
30
V dc
110
V dc
80
V dc
8
A dc
5
A dc
0.5
1/ Derate linearly 11.4 mW/擄C for T
A
> 25擄C.
2/ Derate linearly 300 mW/擄C for T
C
> 100擄C.
1.4 Primary electrical characteristics at T
C
= 25擄C.
Limits
h
FE3
1/
V
CE
= 5 V dc
I
C
= 5 A dc
h
FE2
1/
V
CE
= 2 V dc
I
C
= 1 A dc
|h
fe
|
V
CE
= 10 V dc
I
C
= 1 A dc
f = 10 MHz
V
BE(sat)
1/
I
C
= 1 A dc
I
B
= 100 mA dc
V
CE(sat)
1/
I
C
= 1 A dc
I
B
= 100 mA dc
C
obo
V
CB
= 10 V dc
I
E
= 0
100 kHz
鈮?/div>
f
鈮?/div>
1 MHz
擄C/W
---
3.33
R
胃
JC
V dc
Min
Max
15
---
40
120
3
12
---
1.2
V dc
---
0.25
pF
---
150
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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