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JANTXV2N4930 Datasheet

  • JANTXV2N4930

  • TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 50MA I(C) | TO-39

  • 84.27KB

  • 16頁

  • ETC

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上傳產品規(guī)格書

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INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 1 July 2002.
MIL-PRF-19500/397G
1 April 2002
SUPERSEDING
MIL-PRF-19500/397F
21 April 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON
TYPES 2N3743, 2N4930, AND 2N4931
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, high-voltage transistor.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500
* 1.2 Physical dimensions. See figure 1 (TO-39) and figures 2 and 3 for JANHC and JANKC (die) dimensions.
1.3 Maximum ratings.
Type
P
T
(1)
T
A
= +25擄C
W
1.0
1.0
1.0
P
T
(2)
T
C
= +25擄C
W
5
5
5
V
CBO
V
EBO
V
CEO
I
C
T
J
and T
STG
2N3743
2N4930
2N4931
V dc
300
200
250
V dc
5
5
5
V dc
300
200
250
mA dc
200
200
200
擄C
-65 to +200
-65 to +200
-65 to +200
(1) Derate linearly at 5.71 mW/擄C above T
A
> +25擄C.
(2) Derate linearly at 28.6 mW/擄C above T
C
> +25擄C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-
VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement
Proposal (DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

JANTXV2N4930 產品屬性

  • 0現(xiàn)貨

  • 在售

  • Military, MIL-PRF-19500/397

  • 散裝

  • 在售

  • PNP

  • 200 mA

  • 200 V

  • 1.2V @ 3mA，30mA

  • -

  • 50 @ 30mA，10V

  • 1 W

  • -

  • -65°C ~ 200°C（TJ）

  • 通孔

  • TO-205AD，TO-39-3 金屬罐

  • TO-39（TO-205AD）

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