TECHNICAL DATA
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/366
Devices
2N3498
2N3498L
2N3499
2N3499L
2N3500
2N3500L
2N3501
2N3501L
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
0
(1)
2N3498
*
2N3499
*
100
100
6.0
500
2N3500
*
2N3501
*
150
150
6.0
300
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0
C
Unit
0
TO-5*
2N3498L, 2N3499L
2N3500L, 2N3501L
@ T
A
= 25 C
@ T
C
= 25
0
C
(2)
Operating & Storage Junction Temp. Range
P
T
T
J
,
T
stg
Symbol
R
胃
JC
1.0
5.0
-55 to +200
Max.
35
THERMAL CHARACTERISTICS
C/W
Junction-to-Ambient
175
R
胃
JA
*Electrical characteristics for 鈥淟鈥?suffix devices are identical to the 鈥渘on L鈥?corresponding devices
1) Derate linearly 5.71 W/
0
C for T
A
> 25
0
C
2) Derate linearly 28.6 W/
0
C for T
C
> 25
0
C
Characteristics
Thermal Resistance:
Junction-to-Case
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 50 Vdc
V
CB
= 75 Vdc
V
CB
= 100 Vdc
V
CB
= 150 Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc
V
EB
= 6.0 Vdc
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
V
(BR)
CEO
100
150
50
50
10
10
25
10
Vdc
I
CBO
畏Adc
畏Adc
碌A(chǔ)dc
碌A(chǔ)dc
畏Adc
碌A(chǔ)dc
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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