The documentation and process conversion measures
necessary to comply with this document shall be
completed by 8 May 2002.
INCH-POUND
MIL-PRF-19500/343F
8 February 2002
SUPERSEDING
MIL-PRF-19500/343E
28 November 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,
LOW POWER, TYPES 2N2857 AND 2N2857UB
JAN, JANTX, JANTXV, AND JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low power, ultra-high
frequency transistors. Four levels of product assurance are provided for each device type and two levels for
unencapsulated chips as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (TO-72) and 2 (surface mount) and figure 3 (JANHC, JANKC).
1.3 Maximum ratings.
P
T
(1)
T
A
= +25擄C
mW
200
P
T
(2)
T
C
= +25擄C
MW
300
I
C
V
CBO
V
CEO
V
EBO
T
J
and T
STG
擄C
-65 to +200
mA dc
40
V dc
30
V dc
15
V dc
3
(1) Derate linearly 1.14 mW/擄C for T
A
> +25擄C.
(2) Derate linearly 1.71 mW/擄C for T
C
> +25擄C.
1.4 Primary electrical characteristics at T
A
= +25擄C.
h
FE1
V
CE
= 1 V dc
I
C
= 3 mA dc
| h
fe
|
V
CE
= 6 V dc
I
C
= 5 mA dc
f = 100 MHz
C
cb
V
CB
= 10 V dc
I
E
= 0
f = 100 kHz <
f< 1 MHz
pf
1.0
F
V
CE
= 6 V dc
I
C
= 1.5 mA dc
f = 450 MHz
R
g
= 50
鈩?/div>
db
4.5
G
pe
V
CE
= 6 V dc
I
C
= 1.5 mA dc
f = 450 MHz
db
12.5
21
r
b
' C
c
V
CB
= 6 V dc
I
E
= 2 mA dc
f = 31.9 MHz
ps
4
15
Min
Max
30
150
10
21
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form
1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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