音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

JANHCD1N5551 Datasheet

  • JANHCD1N5551

  • This specification covers the performance requirements for s...

  • 28頁

  • ETC

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 19 July 2004.
INCH-POUND
MIL-PRF-19500/420H
19 April 2004
SUPERSEDING
MIL-PRF-19500/420G
30 December 2002
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,
JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,
JANHCE, JANKCA, JANKCD, AND JANKCE
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor
diodes. Four levels of product assurance are provided for each encapsulated device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US
through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.
1.3 Maximum ratings. Unless otherwise specified, T
C
= +25擄C and ratings apply to all case outlines.
Col. 1
Type
Col. 2
V
(BR)
Col. 3
V
RWM
and
V
(BR)min
Col. 4
I
O1
T
L
= +55擄C;
L = .375 inch
(1) (2) (3)
A dc
5
5
5
5
5
Col. 5
I
FSM
I
O
= 2 A dc
t
p
= 1/120 s
T
A
= +55擄C
A(pk)
100
100
100
100
100
Col. 6
T
J
Col. 7
I
O2
T
A
=
+55擄C
(2) (4)
A dc
3
3
3
3
3
Col. 8
T
STG
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
V dc
1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US
200
400
600
800
1,000
200
400
600
800
1,000
擄C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
擄C
-65 to +175
-65 to +175
-65 to +175
-65 to +175
-65 to +175
(1) Derate linearly at 41.6 mA/擄C above T
L
= +55擄C at L = .375 inch (9.53 mm).
(2) An I
O
of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the
maximum junction temperature at or below +200擄C as proven by the junction temperature rise test (see 6.5).
Barometric pressure reduced:
1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).
1N5553, 1N5554
- 33 mmHg (70,000 feet).
(3) Does not apply to surface mount devices.
(4) Derate linearly at 25 mA/擄C above T
A
= +55擄C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconduction@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961

JANHCD1N5551相關(guān)型號(hào)PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號(hào)推薦

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋
返回頂部

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動(dòng)力！意見一經(jīng)采納，將有感恩紅包奉上哦！