TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/510
Devices
2N6249
2N6250
2N6251
Qualified Level
JAN
JANTX
JANTXV
JANHC
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Temp Range
Symbol
2N6249 2N6250
V
CEO
V
CBO
V
EBO
I
C
I
B
P
T
T
op,
T
stg
200
300
275
375
6.0
10
5.0
5.5
175
-55 to +200
Max.
1.0
2N6251
350
450
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
0
C/W
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R
胃
JC
0
1) Derate linearly at 34.2 mW/ C for T
A
> +25
0
C
2)
Derate linearly at 1.0 W/
0
C for T
C
> +25
0
C
TO-3 (TO-204AA)*
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc; L = 42 mH; F = 30-60 Hz
(See Figure 3 of MIL-PRF-19500/510)
2N6249
2N6250
2N6251
V
(BR)
CEO
200
275
350
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc; L = 14 mH; F = 30-60 Hz; R
BE
= 50鈩?/div>
(See Figure 3 of MIL-PRF-19500/510)
2N6249
2N6250
2N6251
Emitter-Base Cutoff Current
V
EB
= 6 Vdc
Collector-Emitter Cutoff Current
V
CE
= 150 Vdc
2N6249
V
CE
= 225 Vdc
2N6250
V
CE
= 300 Vdc
2N6251
V
(BR)
CER
225
300
375
100
1.0
1.0
1.0
Vdc
I
EBO
碌A(chǔ)dc
I
CEO
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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