The documentation process conversion
measures necessary to comply with this
revision shall be completed by 22 January 1998
INCH-POUND
MIL-PRF-19500/622A
22 October 1997
SUPERSEDING
MIL-S-19500/622
5 April 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistor. Four levels of product
assurance are provided as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO - 254).
1.3 Maximum ratings.
PT 1/
TC = +25擄C
W
2N7368
115
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
R
胃JC
V dc
80
V dc
80
V dc
7.0
A dc
4.0
A dc
10
擄C
-65 to +200
擄C/W
max
1.5
1/ Derate linearly 0.657 W/擄C above TC = +25擄C.
1.4 Primary electrical characteristics.
hFE2 1/
VCE = 2.0 V dc
IC = 3.0 A dc
VBE(SAT)1 1/
IC = 5.0 A dc
IB = 0.5 A dc
VCE(SAT)1 1/
IC = 5.0 A dc
IB = 0.5 A dc
Cobo
VCB = 10 V dc
IE = 0
f = 100 kHz to 1 MHz
pF
|hfe|
VCE = 10 V dc
IC = 0.5 A dc
f = 1 MHz
V dc
Min
Max
30
140
V dc
1.5
1.0
500
4.0
20
1/ Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961