The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 13 November
2002.
INCH-POUND
MIL-PRF-19500/595D
13 August 2002
SUPERSEDING
MIL-PRF-19500/595C
26 August 1996
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
TRANSISTOR, P-CHANNEL, SILICON,
TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for an P-channel, enhancement-mode,
MOSFET, power transistor intended for use in high density power switching applications. Four levels of product
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product
assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum
avalanche current (IAR).
* 1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (T0-267AB) for surface mount devices, and figure 3
for JANHC and JANKC (die) dimensions.
* 1.3 Maximum ratings (T
C
= +25擄C, unless otherwise specified).
Min
Type
V
(BR)DSS
V
GS
= 0
I
D
= -1.0
mA dc
V dc
-100
-200
P
T
(1)
T
C
=
+25擄C
W
125
125
P
T
T
A
=
+25擄C
W
4.0
4.0
V
GS
I
D1
(2)
T
C
=
+25擄C
A dc
-18
-11
I
D2
(2)
T
C
=
+100擄C
A dc
-11
-7
I
S
I
DM
(3)
T
op
and
T
STG
擄C
-55 to +150
-55 to +150
R
胃
JC
max
擄C/W
1.0
1.0
V dc
鹵20
鹵20
A dc
-18
-11
A(pk)
-72
-44
2N7236, 2N7236U
2N7237, 2N7237U
See footnotes next page.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited
FSC 5961