TECHNICAL DATA
NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/99
Devices
2N696
2N696S
2N697
2N697S
Qualified Level
JAN
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation @ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
Operating & Storage Junction Temperature Range
Symbol
V
CBO
V
EBO
P
T
T
J
,
T
stg
Symbol
R
胃
JC
Value
60
5.0
0.6
2.0
-65 to +200
Max.
0.075
Units
Vdc
Vdc
W
W
0
C
Unit
C/mW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 4.0 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 13.3 mW/
0
C for T
C
> 25
0
C
0
TO-5*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CER
I
CBO
I
EBO
Min.
Max.
Unit
Vdc
10
0.1
10
碌A(chǔ)dc
碌A(chǔ)dc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
R
BE
= 10
鈩?
I
C
= 100 mAdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
V
CB
= 30 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
40
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
2N696,s
2N697,s
2N696,s
2N697,s
20
40
12.5
20.0
0.3
60
120
h
FE
V
CE(sat)
V
BE(sat)
1.5
1.3
Vdc
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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