JANTXV2N6898 Datasheet

IC型號(hào)：
JANTXV2N6898
PDF描述：
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 25A I(D) |...
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138.45KB
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This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be

slightly different in format due To electronic conversion processes. Actual technical content will be the same.

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 21 August 1999

INCH-POUND

MIL-PRF-19500/565B

21 May 1999

SUPERSEDING

MIL-S-19500/565A

7 October 1987

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL,

SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898

JAN, JANTX, JANTXV AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figures 1 and 2, TO-205AF (formerly TO-39) for 2N6895, TO-204AA for 2N6896 and 2N6897; and

TO-204AE for 2N6898 (formerly TO 鈥?3).

1.3 Maximum ratings. Unless otherwise specified, TA = +25擄C.

Type

PT 1/

TC = +25擄C TA = +25擄C

2N6895

2N6896

2N6897

2N6898

8.33

100

150

0.6

VDS

VDG

VGS

ID2 2/

ID1 2/

TC = +25擄C TC = +100擄C

A dc

1.16

6.0

A dc

0.74

3.8

7.6

15.8

IDM

TJ and

TSTG

擄C

-55 to +150

V dc

100

V dc

100

V dc

鹵20

A dc

1.16

6.0

A(pk)

1/ Derate linearly TC > +25擄C 鈥?2N6895 (0.067 W/擄C), 2N6896 (0.48 W/擄C), 2N6897 (0.8 W/擄C), 2N6898 (1.2 W/擄C).

2/ Derate above TC = +25

擄C

according to the formula

where P(rated) = PT 鈥?(TC = -25) (W/擄C) watts;

K = max r

DS(on)

at TJ =+150擄C.

(

rated

)

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

現(xiàn)有數(shù)量
0現(xiàn)貨
價(jià)格
停產(chǎn)
系列
-
包裝
散裝
產(chǎn)品狀態(tài)
停產(chǎn)
FET 類(lèi)型
P 通道
技術(shù)
MOSFET（金屬氧化物）
漏源電壓（Vdss）
100 V
25°C 時(shí)電流 - 連續(xù)漏極 (Id)
25A（Tc）
驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）
10V
不同 Id、Vgs 時(shí)導(dǎo)通電阻（最大值）
200 毫歐 @ 15.8A，10V
不同 Id 時(shí) Vgs(th)（最大值）
4V @ 250μA
不同 Vgs 時(shí)柵極電荷?(Qg)（最大值）
-
Vgs（最大值）
±20V
不同 Vds 時(shí)輸入電容 (Ciss)（最大值）
3000 pF @ 25 V
FET 功能
-
功率耗散（最大值）
150W（Tc）
工作溫度
-55°C ~ 150°C（TJ）
安裝類(lèi)型
通孔
供應(yīng)商器件封裝
TO-3
封裝/外殼
TO-204AA，TO-3

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