The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 30 October 1999
INCH-POUND
MIL-PRF-19500/547B
30 July 1999
SUPERSEDING
MIL-S-19500/547A
20 January 1988
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,
SILICON TYPES 2N6660 AND 2N6661
JAN, JANTX, JANTXV AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level,
high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-205AD).
1.3 Maximum ratings. Unless otherwise specified, TA = +25擄C.
Type
PT 1/
PT
TC = +25擄C TA = +25擄C
W
2N6660
2N6661
6.25
6.25
mW
725
725
VDS
VDGR
3/
V dc
60
90
V dc
60
90
V dc
鹵
20
鹵
20
VGS
ID1 2/
ID2 2/
TC = +25擄C TC = +100擄C
A dc
0.99
0.86
A dc
0.62
0.54
IS
IDM
TJ and
TSTG
擄C
-65 to +150
A dc
-0.99
-0.86
A(pk)
3
3
1/ Derate linearly 0.05 W/擄C for TC > +25擄C
2/ Derate above TC = +25
擄C
according to the formula
where P(rated) = 150 - (TC -25) (0.05) watts;
K = max r
DS(on)
at TJ =+150擄C.
3/ R
GS
鈮?/div>
1 M ohm.
I
D
=
P
(
rated
)
K
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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