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JANTXV2N6649 Datasheet

  • JANTXV2N6649

  • TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 10A I(C...

  • 17頁

  • ETC

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The documentation process conversion measures
necessary to comply with this revision shall be
completed by 10 December 1999
INCH-POUND
MIL-PRF-19500/527B
10 September 1999
SUPERSEDING
MIL-S-19500/527A
1 July 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER
TYPES 2N6648, 2N6649 and 2N6650 JAN, JANTX AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon, darlington power transistor. Three levels of
product assurance are provided as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO - 3).
1.3 Maximum ratings.
P
T
1/
T
A
= +25擄C
W
2N6648
2N6649
2N6650
5.0
5.0
5.0
P
T
2/
T
C
= +25擄C
W
85
85
85
V
CBO
V
CEO
V
EBO
I
B
I
C
T
J
and T
STG
R
JC
V dc
-40
-60
-80
V dc
-40
-60
-80
V dc
-5.0
-5.0
-5.0
A dc
-0.25
-0.25
-0.25
A dc
-10
-10
-10
擄C
-65 to +175
-65 to +175
-65 to +175
擄C/W
1.76
1.76
1.76
1/ Derate linearly 33.3 mW/擄C above T
A
> +25擄C.
2/ Derate linearly 567 mW/擄C above T
C
> +25擄C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

JANTXV2N6649 產(chǎn)品屬性

  • 0現(xiàn)貨查看交期

  • 100 : ¥1,185.56900散裝

  • Military, MIL-PRF-19500/527

  • 散裝

  • 在售

  • PNP - 達(dá)林頓

  • 10 A

  • 60 V

  • 3V @ 100mA,10A

  • 1mA(ICBO)

  • 1000 @ 5A,3V

  • 5 W

  • -

  • -65°C ~ 175°C(TJ)

  • 通孔

  • TO-204AA,TO-3

  • TO-204AA(TO-3)

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