The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 27 July 1998.
INCH-POUND
MIL-PRF-19500/498C
27 March 1998
SUPERSEDING
MIL-S-19500/498B
5 October 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPE 2N6306, 2N6308, JAN, JANTX AND JANTXV
This Specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See 3.3. (Similar to TO-3)
1.3 Maximum ratings.
PT
TC = +25
q
C 1/
W
PT
TC = +100
q
C 1/
W
VCBO
V dc
VCEO
V dc
VEBO
V dc
IB
A dc
4.0
4.0
IC
A dc
8.0
8.0
TJ and TSTG
q
C
-65 to +200
-65 to +200
2N6306
125
62.5
500
250
8.0
2N6308
125
62.5
700
350
8.0
1/ Between TC = +25
q
C and TC = +175
q
C , linear derating factor (average) = .833 W/
q
C .
1.4 Primary electrical characteristics.
hFE2
VCE = 5 V dc
IC = 3 A dc
Min
Max
hFE3
VCE = 5 V dc
IC = 8 A dc
Min
Max
VBE(sat) 1/
IC = 8 A dc
IB = 2/
Min
Max
VCE(sat)
IC = 8 A dc
IB = 2
Min
V dc
Max
V dc
5
5
1
IC = 3 A dc
IB = 0.6 A dc
Min
V dc
Max
V dc
0.8
1.5
2N6306
2N6308
15
12
75
60
4
3
Cobo
VCB = 10 V dc
IE = 0
100 < f < 1 MHz
pF
Switching
ton
toff
2.3
2.5
_
hfe
_
VCE = 10 V dc
IC = 0.3 A dc
f = 1 MHz
P
s
0.6
P
s
3.0
Min
Max
5
30
250
1/ Pulsed (see 4.5.1).
2/ 2N6306 (IB) = 2.0 A dc; 2N6308 (IB) = 2.67 A dc.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961