TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485
Devices
2N5415
2N5415S
2N5416
2N5416S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25
0
C
@ T
C
= +25
0
C
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
,
T
stg
2N5415
200
200
2N5416
300
350
Units
Vdc
Vdc
Vdc
Adc
W
W
0
C
Unit
C/W
6.0
1.0
0.75
10
-65 to +200
Max.
17.5
TO- 5*
2N5415, 2N5416
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R
胃
JC
0
0
1) Derate linearly 4.28 mW/ C for T
A
> +25 C
2) Derate linearly 57.1 mW/
0
C for T
C
> +25
0
C
0
2N5415S, 2N5416S
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
V
CE
= 150 Vdc
V
CE
= 200 Vdc
V
CE
= 250 Vdc
V
CE
= 300 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 200 Vdc, V
BE
= 1.5 Vdc
V
CE
= 300 Vdc, V
BE
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 175 Vdc
V
CB
= 280 Vdc
Collector-Base Cutoff Current
V
CB
= 200 Vdc
V
CB
= 350 Vdc
2N5415
2N5415
2N5416
2N5416
50
1.0
50
1.0
20
50
50
50
50
500
500
碌Adc
mAdc
碌Adc
mAdc
碌Adc
碌Adc
碌Adc
碌Adc
I
CEO
I
EBO
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
I
CEX
I
CBO1
I
CBO2
碌Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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