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JANS2N5151L Datasheet

  • JANS2N5151L

  • TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-39VAR

  • 136.70KB

  • 23頁(yè)

  • ETC

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上傳產(chǎn)品規(guī)格書

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 27 October 2001.
INCH-POUND
MIL-PRF-19500/545D
27 July 2001
SUPERSEDING
MIL-PRF-19500/545C
21 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER
TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated
device type.
1.2 Physical dimensions. See figure 1 (similar to T0-205), figures 2, 3, and 4 (JANHC and JANKC), and
figure 5 (U3).
1.3 Maximum ratings.
Types
Reverse
pulse (2)
energy
mj
Safe
operating
area
P
T
T
A
= +25擄C
W
P
T
T
C
= +25擄C
W
V
CBO
V
CEO
V
EBO
I
C
I
C
(1)
A dc
T
stg
and T
J
擄C
V dc
V dc
V dc
A dc
2N5151, L
2N5153, L
2N5151U3
2N5153U3
1 (3)
1 (3)
1.16 (5)
1.16 (5)
11.8 (4)
11.8 (4)
100 (6)
100 (6)
100
100
100
100
80
80
80
80
5.5
5.5
5.5
5.5
2
2
2
2
10
10
10
10
15
15
15
15
See
figure 6
See
figure 6
-65 to
+ 200
-65 to
+ 200
(1) This value applies for Pw
鈮?/div>
8.3 ms, duty cycle
鈮?/div>
1 percent.
(2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy
test circuit of figure 7.
(3) Derate linearly 5.7 mW/擄C for T
A
> +25擄C.
(4) Derate linearly 66.7 mW/擄C for T
C
> +25擄C.
(5) Derate linearly 6.67 mW/擄C for T
A
> +25擄C.
(6) Derate linearly 571 mW/擄C for T
C
> +25擄C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-
VAC, P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
FSC 5961

JANS2N5151L 產(chǎn)品屬性

  • 0現(xiàn)貨查看交期

  • 50 : ￥669.22280散裝

  • Military, MIL-PRF-19500/545

  • 散裝

  • 在售

  • PNP

  • 1 mA

  • 80 V

  • 1.5V @ 500mA，5A

  • 1mA

  • 30 @ 2.5A，5V

  • 1 W

  • -

  • -65°C ~ 200°C（TJ）

  • 通孔

  • TO-205AA，TO-5-3 金屬罐

  • TO-5

JANS2N5151L相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
    MII
  • 英文版
    JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
    MICROPAC [Micro...
  • 英文版
    JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
    MII
  • 英文版
    JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
    MICROPAC [Micro...
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    JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
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  • 英文版
    JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
    MICROPAC [Micro...
  • 英文版
    Microsemi Corporation [RECTIFIERS ASSEMBLIES SINGLE PHASE B...
    MICROSEMI
  • 英文版
    RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 25 AMP, MILITARY...
    MICROSEMI
  • 英文版
    RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 25 AMP, MILITARY...
    MICROSEMI ...
  • 英文版
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    RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 25 AMP, MILITARY...
    MICROSEMI [Micr...
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    Microsemi Corporation [6.2 & 6.55 Volt Temperature Comp...
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    Microsemi Corporation [6.2 & 6.55 Volt Temperature Comp...
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    6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temp...
    MICROSEMI [Micr...
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