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JANTXV2N4854U Datasheet

  • JANTXV2N4854U

  • TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 600...

  • 15頁

  • ETC

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上傳產(chǎn)品規(guī)格書

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The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 25 November 2001.
INCH-POUND
MIL-PRF-19500/421F
25 August 2001
SUPERSEDING
MIL-PRF-19500/421E
2 April 1998
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, UNITIZED, NPN/PNP,
COMPLEMENTARY, SILICON TYPES 2N3838, 2N4854, AND 2N4854U
JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for unitized, dual transistors which contain a
pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of
product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Polarity designation. Voltages and currents of limits and test conditions shown herein apply to the NPN triode.
For the PNP triode, the values are the same, but the polarity designations shall be the opposite.
1.3 Physical dimensions. See figures 1 (6 lead flatpak), 2 (similar to T0-77), and 3 (surface mount).
1.4 Maximum ratings.
P
T
at T
A
= +25 C
2N3838 (2)
One
Transistor
W
0.25
Total
Device
W
0.35
V
EBO
V dc
5
V
CEO
V dc
40
2N4854 (3)
One
Transistor
W
0.30
V
1C-2C
V dc
Total
Device
W
0.60
q
P
T
at T
C
= +25 C (1)
2N3838 (4)
One
Transistor
W
0.7
Total
Device
W
1.4
I
C
MA dc
600
2N4854 (5)
One
Transistor
W
1.0
T
J
Total
Device
W
2.0
T
STG
q
V
CBO
V dc
60
Lead to case voltage
V dc
q
C
200
q
C
-55 to +200
r
120
r
120
(1)
(2)
(3)
(4)
(5)
T
C
rating do not apply to surface mount devices (2N4854U).
For T
A
> +25
q
C, derate linearly 1.43 mW/
q
C one transistor, 2.00 mW/
q
C both transistors.
For T
A
> +25
q
C, derate linearly 1.71 mW/
q
C one transistor, 3.43 mW/
q
C both transistors.
For T
C
> +25
q
C, derate linearly 4.0 mW/
q
C one transistor, 8.0 mW/
q
C both transistors.
For T
C
> +25
q
C, derate linearly 5.71 mW/
q
C one transistor, 11.43 mW/
q
C both transistors.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

JANTXV2N4854U 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 在售

  • Military, MIL-PRF-19500/421

  • 散裝

  • 在售

  • NPN，PNP

  • 600mA

  • 40V

  • 400mV @ 15mA，150mA

  • 10μA（ICBO）

  • 100 @ 150mA，10V

  • 600mW

  • -

  • -65°C ~ 200°C（TJ）

  • 表面貼裝型

  • 6-SMD，無引線

  • 6-SMD

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