MIL-s-19500/49c
(EL)
24 nay 1968
SUPERSEDING:
See Section 6
MILITASY
SPECIF1CATION
PNP, CEFMANIUM
SE-f
ICONDUCTOR DEVICE, TRANSISTOR,
TYPES 2N464, 2N465, 2N467
1,
SCOPE
1.1
=.
- ThLs specification cOver$ the detail rewireaents
for germanium,
PNP, transistors for use in Low-pawer, amp Lifier applications in compatible
electronic-equipment
circuits
(See 3.4 and 6.2b herein. )
1.2
1.3
Outline and dimensions.
Maximum
ratings.
- See Fig. 1 herein.
(TO-5)
specified):
#
- (At TA = +25擄C, unless otherwise
~
=~鈥檦:v:鈥檝:
Al
For TA > +25擄C, derate
Pulsed
linearlY at 2.0 fil鈥漜.
~1
(see 4.3. L herein).
characteristics.
- (At TA = +25擄C, U鈥淟I?SS otherwise
electrical
fhfb
hf.
at: f=lkHz
VCB = -6Vdc
IE = 1 midc
t-lin. Max.
---
---
33
66
260
at, f = LkHz
VCB = -6Vdc
lE = 1 d.dc
Min.
&
0.4
0.5
0.7
Max.
~
---
---
---
-
L8
L8
L8
鈥榠b
at,
(See Tab Le
I herein)
Min.
Max.
*
45
45
45
g
---
---
---
h
ob
at:
(See Table
1 herein)
Min.
Max.
@
1.0
L.O
1.0
c
obo
at:
(See Table
1 herein)
Min.
pf~
---
---
---
20
20
20
Max.
NF
at:
(See T.bll
I herein)
Min.
Q
---
---
---
Max
Q
20
20
20
L4
27
110
I FSC-596L I
1.4
Particular
specified) :
2N464
2N465
2N467