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JAN2N43A Datasheet

  • JAN2N43A

  • TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 300MA I(C) | TO-5

  • 112.32KB

  • 9頁

  • ETC

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上傳產(chǎn)品規(guī)格書

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The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 1 June 1999.
INCH-POUND
MIL-PRF-19500/6C
1 March 1999
SUPERSEDING
MIL-S-19500/6B
28 December 1971
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP,
GERMANIUM, LOW-POWER,
TYPES 2N43AZ1, 2N43AZ2, 2N44AZ1 AND 2N44AZ2
This Specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, germanium, low-power transistor. One level of product
assurance is provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (Z1 suffix) and figure 2 (Z2 suffix).
1.3 Maximum ratings.
P
T
1/
T
A
= +25擄C
mW
150
V
CB
V
EB
V
CEO
T
J
擄C
+85
T
STG
擄C
-55 to +100
V dc
-45
V dc
-5
V dc
-30
1/ Derate linearly 2.50 mW/擄C for T
A
> +25擄C.
1.4 Primary electrical characteristics at T
A
= +25擄C.
Limits
Types
1/
h
fe
V
CE
= -5 V dc
I
E
= 1.0 mA dc
h
ib
V
CB
= -5 V dc
I
E
= 1.0 mA dc
鈩?/div>
h
ob
V
CB
= -5 V dc
I
E
= 1.0 mA dc
碌mho
0.1
0.1
1.5
1.5
f
hfb
C
obo
100 kHz <f < 1 MHz
V
CB
= -5 V dc
I
E
= 0
pF
20
20
60
60
C
obo
V
CB
= -5 V dc
I
E
= 1.
f = 1 kHz
dB
-
-
20
15
MHz
0.5
0.5
3.5
3.0
Min
2N43A
2N44A
2N43A
2N44A
30
16
66
38
25
27
35
38
Max
1/ Applies to both package configurations.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
Distribution Statement A. Approved for public release; distribution is unlimited.
FSC 5961

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