INCH-POUND
The documentation and process conversion measures necessary to
comply with this document shall be completed by 2 July 2002.
MIL-PRF-19500/511E
2 April 2002
SUPERSEDING
MIL-PRF-19500/511D
19 January 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
TYPE 2N4261, 2N4261UB, JAN, JANTX, JANTXV AND JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon, switching transistors. Four
levels of product assurance are provided for each encapsulated device type and two levels for unencapsulated dice
as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-72), figure 2 (UB) and figure 3 (JANHC, JANKC).
1.3 Maximum ratings.
P
T
T
A
= +25擄C (1)
mW
200
V dc
15
V dc
15
V dc
4.5
mA dc
30
擄C
200
擄C
-65 to +200
擄C/mW
0.860
V
CBO
V
CEO
V
EBO
I
C
R
螛JA
T
J
T
J
and T
STG
(1) Derate linearly 1.14 mW/擄C above T
A
= +25擄C.
1.4 Primary electrical characteristics at T
A
= +25擄C, unless otherwise specified.
h
FE1
(1)
V
CE
= 1.0 V dc
I
C
= 1 mA dc
Min
Max
25
h
FE2
(1)
V
CE
= 1.0 V dc
I
C
= 10 mA dc
30
150
h
FE3
(1)
V
CE
= 1.0 V dc
I
C
= 30 mA dc
|h
fe2
|
V
CE
= 10 V dc
I
C
= 10 mA dc
f = 100 MHz
20
60
2.5
3.5
rb鈥?Cc
V
CE
= 4.0 V dc
I
C
= 5 mA dc
f = 31.8 MHz
ps
Switching
t
on
ns
t
off
ns
20
See note on next page.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961