The documentation and process conversion measures
necessary to comply with this revision shall
be completed by 22 October 1999
INCH-POUND
MIL-PRF-19500/371D
23 July 1999
SUPERSEDING
MIL-S-19500/371C
27 March 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
TYPES 2N3902 AND 2N5157
JAN AND JANTX
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistors. Two levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-3), (see 3.3).
1.3 Maximum ratings.
Type
PT 1/
TA = +25
擄
C
W
2N3902
2N5157
5.0
5.0
PT 2/
TC = +75擄C
W
100
100
V dc
700
700
V dc
400
500
V dc
5.0
6.0
A dc
2.0
2.0
A dc
3.5
3.5
擄C
-65 to +200
-65 to +200
擄C/W
1.25
1.25
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
R
螛
JC
1/ Derate linearly 29 mW/擄C above TA = +25擄C.
2/ Derate linearly 0.8 W/擄C above TC = +75擄C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961