This documentation process conversion measures necessary to
comply with this revision shall be completed by 30 October 1999.
INCH-POUND
MIL-PRF-19500/402C
30 August 1999
SUPERSEDING
MIL-S-19500/402B
8 April 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPE 2N3739
JAN, JANTX AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-66)
1.3 Maximum ratings.
Types
P
T
1/
T
C
= +25
C
W
P
T
2/
T
C
= +100
C
W
10
V
CBO
V
CEO
V
EBO
I
B
IC
T
STG
and T
J
R
JC
V dc
325
V dc
300
V dc
6.0
A dc
0.5
A dc
1.0
C
C/W
2N3739
20
-55 to +200
7.5
1/ Derate linearly, 0.114 W/
C for T
C
+25
C.
2/ Derate linearly, 0.100 W/
C for T
C
+100
C.
1.4 Primary electrical characteristics at T
A
= 25
C.
h
FE1
1/
h
FE3
1/
V
BE
V
CE(SAT)
I
C
= 250 mA dc
I
B
= 25 mA dc
C
obo
|h
fe
|
Switching
Limit
V
CE
= 10 V dc V
CE
= 10 V dc V
CE
= 10 V dc
I
C
= 10 mA dc I
C
= 100 mA dc I
C
= 100 mA dc
V
CB
= 100 V dc
V
CE
= 10 V dc
I
E
= 0 mA dc
I
C
= 100 mA dc
f = 10 MHz
100 kHz
f
1 MHz
pF
1
6
t
on
t
off
V dc
Min
Max
30
40
200
V dc
s
s
1
2.5
20
1.5
3.5
1/ Pulsed (see 4.5.1)
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961