The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 05 November 1999.
INCH-POUND
MIL-PRF-19500/370D
05 August 1999
SUPERSEDING
MIL-S-19500/370C
25 September 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
TYPE 2N3442, JAN, JANTX AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistor. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-3), (see 3.3).
1.3 Maximum ratings.
PT 1/
TC = +25擄C
W
6.0
PT 2/
TC = +25擄C
W
117
VCBO
VCEO
VEBO
VCER
IB
IC
TOP and TSTG
V dc
160
V dc
140
V dc
7
V dc
150
A dc
7
A dc
10
擄C
-65 to +200
1/ Derate linearly 34.2 mW/擄C above TA = +25擄C.
2/ Derate linearly 668 mW/擄C above TC = +25擄C.
1.4 Primary electrical characteristics.
hFE1 1/
VCE = 4 V dc
IC = 3 A dc
VCE(sat) 1/
IC = 3 A dc
IB = 300 mA dc
V dc
hfe
VCE = 4 V dc
IC = 3 A dc
f = 100 kHz
R
胃
JC
擄C/W
1.0
1.5
Min
Max
20
70
1.0
1/ Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961