The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 28 April 2002.
INCH-POUND
MIL-PRF-19500/323H
28 January 2002
SUPERSEDING
MIL-PRF-19500/323G
22 June 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
TYPES 2N3250A, 2N3251A, 2N3250AUB, 2N3251AUB,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for die.
1.2 Physical dimensions. See figures 1 (similar to TO-18), 2 (surface mount), and 3 (die) herein.
1.3 Maximum ratings.
P
T
(1)
T
A
= +25擄C
V
CBO
V
CEO
V
EBO
I
C
T
OP
and T
STG
R
胃JA
(1)
W
0.36
V dc
60
V dc
60
V dc
5.0
mA dc
200
擄C
-65 to +200
擄C/W
417
(1) Derate linearly 2.4 mW/擄C above T
A
= +25擄C.
1.4 Primary electrical characteristics.
h
FE4
(1)
V
CE
= 1.0 V dc
I
C
= 50 mA dc
h
FE1
Limits
V
CE
= 1.0 V dc
I
C
= 0.1 mA dc
Min
2N3250A, AUB
2N3251A, AUB
40
80
Max
h
FE3
(1)
V
CE
= 1.0 V dc
I
C
= 10 mA dc
Min
50
100
Max
150
300
|h
fe
|
f = 100 MHz
V
CE
= 20 V dc; I
C
= 10 mA dc
Min
15
30
Max
Min
2.5
3.0
Max
9.0
9.0
(1) Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961