TECHNICAL DATA
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/291
Devices
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
Qualified Level
JAN
JANTX
JANTXV
JANS
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
(1)
P
T
(2 / 3)
All Types
60
60
5.0
600
0.4
1.8
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0
TO-18* (TO-206AA)
@ T
A
= +25
0
C
@ T
C
= +25
0
C
Operating & Storage Junction Temperature Range
T
J
,
T
stg
0
0
1) Derate linearly 2.28 mW/ C for T
A
> +25 C.
2) Derate linearly 10.3 mW/
0
C for T
C
> +25
0
C.
3) For UA and UB surface mount case outlines: P
T
= 1.16 W;
derate linearly 6.6mW/
0
C for T
C
> +25
0
C.
C
4 PIN*
2N2906AUA, 2N2907AUA
3 PIN*
2N2906AUB, 2N2907AUB
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CBO
I
CES
I
EBO
Min.
60
10
10
50
50
10
Max.
Unit
Vdc
碌A(chǔ)dc
畏Adc
畏Adc
畏Adc
碌A(chǔ)dc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CE
= 50 Vdc
V
CE
= 60 Vdc
Collector-Base Cutoff Current
V
CE
= 50 Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc
V
EB
= 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2