The documentation and process conversion measures necessary to
comply with this document shall be completed by 5 April 2002.
INCH-POUND
MIL-PRF-19500/354H
5 March 2002
SUPERSEDING
MIL-PRF-19500/354G
23 April 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER
TYPES 2N2604, 2N2604UB, 2N2605 AND 2N2605UB
JAN, JANTX, JANTXV, AND JANS, JANHC, JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power transistors for use
in low noise-level amplifier applications. Four levels of product assurance are provided for each encapsulated
device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-46), figure 2 (UB), and figures 3 and 4 die.
1.3 Maximum ratings.
Type
P
T
(1)
T
A
= +25擄C
MW
400
400
V
CBO
V dc
80
70
V
EBO
V dc
6
6
V
CEO
V dc
60
60
I
C
mA dc
30
30
T
J
and T
STG
擄C
-65 to +200
-65 to +200
R
胃
JA
擄C/W
437
437
2N2604, UB
2N2605, UB
(1)Derate linearly at 2.28 mW/擄C above T
A
= +25擄C.
1.4 Primary electrical characteristics.
h
FE1
V
CE
=5 V dc
I
C
=10
碌
dc
h
fe
V
CE
=5 V dc
I
C
=1 mA dc
f=1 kHz
2N2604
60
180
2N2605
150
450
|h
fe
|
V
CE
=5 V dc
I
C
=500
碌A
dc
f=30 MHz
C
obo
V
CB
=5 V dc
I
E
=0
100 kHz
鈮?/div>
f
鈮?/div>
1 MHz
PF
1
8
6
V
BE(sat)
I
C
=10 mA dc
I
B
=500
碌A
dc
V dc
0.7
0.9
V
CE(sat)
I
C
=10 mA
dc
I
B
=500
碌A
dc
V dc
0.3
Min
Max
2N2604
40
120
2N2605
100
300
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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