The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 15 May 2002.
INCH-POUND
MIL-PRF-19500/376F
15 February 2002
SUPERSEDING
MIL-PRF-19500/376E
31 August 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
UB), and figures 4 and 5 (die).
1.3 Maximum ratings.
Types
P
T
(1)
T
A
= +25擄C
擄C
-65 to +200
-65 to +200
-65 to +200
擄C/W
325
325
325
V
CBO
V
EBO
V
CEO
I
C
T
J
and T
STG
R
胃JA
mW
2N2484
2N2484UA
2N2484UB
360
360
360
V dc
60
60
60
V dc
6
6
6
V dc
60
60
60
mA dc
50
50
50
(1) Derate linearly at 2.06 mW/擄C above T
A
= +25擄C.
1.4 Primary electrical characteristics.
h
fe
Limits
V
CE
= 5 V dc
I
C
= 1 mA dc
f = 1 kHz
C
obo
I
E
= 0
V
CB
= 5 V dc
100 kHz
鈮?/div>
f
鈮?/div>
1 MHz
pF
Min
Max
250
900
2.0
7.0
|h
fe
|2
I
C
= 500
碌A(chǔ)
dc
V
CE
= 5 V dc
f = 30 MHz
V
CE(sat)
(1)
I
C
= 1.0 mA dc
I
B
= 0.1 mA dc
V dc
5.0
0.3
(1) Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000), by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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