The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 4 November 1999.
INCH-POUND
MIL-PRF-19500/177F
4 August 1999
SUPERSEDING
MIL-S-19500/177E
8 February 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER
TYPES 2N1131, 2N1131L, 2N1132, 2N1132L, JAN AND JANTX
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon, low-power transistors. Two levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, 2N1131 and 2N1132 (TO-39), 2N1131L and 2N1132L (TO-5).
1.3 Maximum ratings.
P
T
1/
T
C
= +25擄C
W
2.0
P
T
2/
T
A
= +25擄C
W
0.6
V
CBO
V dc
50
V
CEO
V dc
40
V
EBO
V dc
5.0
I
C
mA dc
600
T
OP
and T
J
擄C
-65 to +200
1/ Derate linearly 11.4 mW/擄C for T
C
鈮?/div>
+25擄C.
2/ Derate linearly 3.4 mW/擄C for T
A
鈮?/div>
+25擄C.
1.4 Primary electrical characteristics.
h
FE1
1/
V
CE
= 10 V dc
I
C
= 150 mA dc
h
fe1
V
CE
= 5.0 V dc
I
C
= 1.0 mA dc
f = 1 kHz
Min
15
30
Max
50
90
V
BE(SAT)
1/
I
C
= 150 mA dc
I
B
= 15 mA dc
V dc
2N1131,L
2N1132,L
Min
20
30
Max
45
90
Min
Max
1.5
1.5
Min
V
CE(SAT)
1/
I
C
= 150 mA dc
I
B
= 15 mA dc
V dc
Max
1.3
1.3
Min
C
obo
f = 1 MHz
V
CB
= 10 V dc
I
E
= 0
pF
Max
45
45
Min
2.5
3.0
Max
20
20
h
fe
f = 20 MHz
I
C
= 50 mA dc
V
CE
= 10 V dc
1/ Pulsed (see 4.4.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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