Silicon Switching Diode
Applications
1N4454,
1N4454-1
DO-35 Glass Package
Used in general purpose applications,
where performance and switching
speed are important.
DO-35 Glass Package
L a dDa .
e
i
0. 1 - . 2 "
0 80 0 2
0. 5 - . 5 m m
4 80 5 8
Features
Six sigma quality
Metallurgically bonded
1.0"
Length
BKC's Sigma Bond鈩?plating
25.4 mm
m m
(Min.)
for problem free solderability
LL-34/35 MELF SMD available
Full approval to Mil-S-19500 /144
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings
0.120-.200"
3.05-5.08-
Dia.
0.06-0.09"
15 - . 8m m
. 322
Maximum Ratings
Peak Inverse Voltage @ 5碌A(chǔ) & 0.1碌A(chǔ) @ -55
o
C
Average Rectified Current
Continuous Forward Current
Peak Surge Current (t
peak
= 1 sec.)
Power Dissipation T
L
= 50
o
C, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics @ 25
o
C*
Forward Voltage @ I
F
= 10 mA
Breakdown Voltage @ I
R
= 5 碌A(chǔ)
Reverse Leakage Current @ V
R
= 50 V
Reverse Leakage Current @ V
R
= 50 V, T=150
o
C
Capacitance @ V
R
= 0 V, f = 1mHz
Reverse Recovery Time (note 1)/(note 2)
Forward Recovery Voltage (note 3)
Symbol
PIV
I
Avg
I
Fdc
I
peak
P
tot
T
Op
T
St
Symbol
V
F
PIV
I
R
I
R
C
T
t
rr
V
fr
Value
75 (Min.)
200
300
1.0
500
200
-65 to +200
Limits
1.0(max)
75 (min)
0.1 (max)
100 (max)
2.0 (max)
2.0/4.0 (max)
3.0 (max)
Unit
Volts
mAmps
mAmps
Amp
mWatts
o
o
C
C
Unit
Volts
Volts
碌A(chǔ)
碌A(chǔ)
pF
nSecs
Volts
Note 1: Per Method 4031-A with I
F
= I
R
= 10 mA, R
L
= 100 Ohms, C = 3 Pf.
Note 2: Per Method 4031-A with I
F
= 10 mA, R
L
= 100 Ohms, Vr = 6 V, Recover to 1.0 mA.
Note 3: Per Method 4026 with I
F
= 100 mA, R
L
= 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repe-
tition Rate = 5 - 100 KHz.
* Unless Otherwise Specified
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
1
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