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IXSX50N60AU1S Datasheet

  • IXSX50N60AU1S

  • IGBT with Diode Combi Pack - Short Circuit SOA Capability

  • 5頁(yè)

  • IXYS   IXYS

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Preliminary data
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
V
CES
= 600 V
IXSX50N60AU1
= 75 A
IXSX50N60AU1S I
C25
V
CE(sat)
= 2.7 V
TO-247 Hole-less SMD
(50N60AU1S)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C, limited by leads
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 22
鈩?/div>
Clamped inductive load, L = 30
碌H
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125擄C
R
G
= 22
鈩?
non repetitive
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
75
50
200
I
CM
= 100
@ 0.8 V
CES
10
300
-55 ... +150
150
-55 ... +150
6
300
V
V
V
V
A
A
A
A
碌s
W
擄C
擄C
擄C
g
擄C
l
l
G
E
C (TAB)
TO-247 Hole-less
(50N60AU1)
C (TAB)
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
l
l
l
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
l
Hole-less TO-247 package for clip
mounting
High current rating
Guaranteed Short Circuit SOA
capability
High frequency IGBT and anti-
parallel FRED in one package
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
4
T
J
= 25擄C
T
J
= 125擄C
8
750
15
鹵100
2.7
V
V
碌A(chǔ)
mA
nA
Applications
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
l
l
l
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
l
V
l
Space savings (two devices in one
package)
High power density
漏 1997 IXYS All rights reserved
97512 (5/97)

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