High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B V
CES
=
=
IXST 40N60B I
C25
V
CE(sat)
=
t
fi typ
=
600V
75A
2.2V
100 ns
Preliminary data
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 2.7
W
Clamped inductive load, V
CC
= 0.8 V
CES
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125擄C
R
G
= 22
W,
non repetitive
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
75
40
150
I
CM
= 80
@ 0.8 V
CES
10
280
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
ms
W
擄C
擄C
擄C
鈥?International standard packages
鈥?Guaranteed Short Circuit SOA
capability
鈥?Low V
CE(sat)
- for low on-state conduction losses
鈥?High current handling capability
鈥?MOS Gate turn-on
- drive simplicity
鈥?Fast Fall Time for switching speeds
up to 50 kHz
Applications
鈥?AC and DC motor speed control
鈥?Uninterruptible power supplies (UPS)
鈥?Welding
Advantages
鈥?Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
鈥?High power density
Features
G = Gate
E = Emitter
TAB = Collector
G
E
(TAB)
(TAB)
G
C
E
TO-247 AD (IXSH)
TO-268 (D3) ( IXST)
1.13/10 Nm/lb.in.
6
300
g
擄C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
4
T
J
= 25擄C
T
J
= 125擄C
7
25
1
鹵100
2.2
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
mA,
V
GE
= 0 V
= 4 mA, V
CE
= V
GE
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98521B (7/00)
漏 2000 IXYS All rights reserved
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