min.
typ. max.
70 m鈩?/div>
3.5
60
5.5
q
ISOPLUS247 package with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- JEDEC TO247AD compatible
- Easy clip assembly
fast CoolMOS power MOSFET - 2
nd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
R
thJC
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 3 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 350 V; I
D
= 50 A
220
55
125
30
95
100
10
0.9
25 碌A(chǔ)
碌A(chǔ)
100 nA
nC
nC
nC
ns
ns
ns
ns
1.1
V
q
Applications
q
q
q
q
q
V
GS
= 10 V; V
DS
= 380 V;
I
D
= 25 A; R
G
= 1.8
鈩?/div>
(reverse conduction) I
F
= 20 A; V
GS
= 0 V
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
0.45 K/W
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2001 IXYS All rights reserved
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