IGBT
V
CES
I
C25
24 A
24 A
V
CE(sat)
3.5 V
4.0 V
IXGA/IXGP12N100
1000 V
IXGA/IXGP12N100A
1000 V
Preliminary Data Sheet
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 150
W
Clamped inductive load, L = 300
mH
T
C
= 25擄C
Maximum Ratings
1000
1000
鹵20
鹵30
24
12
48
I
CM
= 24
@ 0.8 V
CES
100
-55 ... +150
150
-55 ... +150
W
擄C
擄C
擄C
V
V
V
V
A
A
A
A
TO-220AB (IXGP)
G C
E
TO-263 (IXGA)
G
E
C (TAB)
Features
鈥?International standard packages
JEDEC TO-220AB and TO-263AA
鈥?Second generation HDMOS
TM
process
鈥?Low V
CE(sat)
- for minimum on-state conduction
losses
鈥?MOS Gate turn-on
- drive simplicity
Applications
鈥?AC motor speed control
鈥?DC servo and robot drives
鈥?DC choppers
鈥?Uninterruptible power supplies (UPS)
鈥?Switch-mode and resonant-mode
power supplies
Advantages
鈥?Easy to mount with one screw
鈥?Reduces assembly time and cost
鈥?High power density
95591A (3/97)
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4
300
g
擄C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
C
= 3 mA, V
GE
= 0 V
I
C
= 250
mA,
V
GE
= V
GE
V
CE
= 0.8, V
CES
V
GE
= 0 V
I
GES
V
CE(sat)
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
CE90
, V
GE
= 15
12N100
12N100A
Min.
1000
2.5
T
J
= 25擄C
T
J
= 125擄C
Characteristic Values
Typ.
Max.
V
5.0
250
1
鹵100
3.5
4.0
V
mA
mA
nA
V
V
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
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