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IXFK21N100Q Datasheet

  • IXFK21N100Q

  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 21A I(D) | ...

  • 2頁

  • ETC

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HiPerFET
TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated,
Low Qg,
High dV/dt,
Low t
rr
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
IXFK 21N100Q
IXFX 21N100Q
V
DSS
= 1000 V
21 A
I
D25
=
R
DS(on)
= 0.50
鈩?/div>
t
rr
鈮?/div>
250 ns
PLUS 247
TM
(IXFX)
Maximum Ratings
1000
1000
鹵20
鹵30
21
84
21
60
2.5
5
500
-55 ... +150
150
-55 ... +150
300
0.4/6
V
V
V
V
G
(TAB)
D
TO-264 AA (IXFK)
G
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
6
10
g
g
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l
IXYS advanced low Q
g
process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low R
DS (on)
l
Rated for unclamped Inductive load
switching (UIS)
rated
l
Molding epoxies meet UL 94 V-0
flammability classification
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
l
Space savings
l
High power density
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
2.5
V
4.5 V
鹵100
nA
100
碌A(chǔ)
2 mA
0.50
鈩?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 125擄C
漏 2002 IXYS All rights reserved
98677A (2/02)

IXFK21N100Q 產(chǎn)品屬性

  • 25

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 1000V（1kV）

  • 21A

  • 500 毫歐 @ 10.5A，10V

  • 5.5V @ 4mA

  • 170nC @ 10V

  • 6900pF @ 25V

  • 500W

  • 通孔

  • TO-264-3，TO-264AA

  • TO-264AA

  • 管件

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