鈮?/div>
250 ns
Maximum Ratings
100
100
鹵20
鹵30
180
76
720
180
60
3
5
560
-55 ... +150
150
-55 ... +150
300
0.9/6
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
6
10
g
g
PLUS 247
TM
(IXFX)
G
D (TAB)
D
S
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l
International standard packages
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
100
2.0
V
4.0 V
鹵100
nA
T
J
= 25擄C
T
J
= 125擄C
100
碌A
2 mA
8 m鈩?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Note 1
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
Advantages
l
PLUS 247
TM
package for clip or spring
mounting
l
Space savings
l
High power density
漏 1999 IXYS All rights reserved
98552B (7/99)
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