Advanced Technical Information
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Gate Charge and Capacitances
IXFH 20N60Q
IXFT 20N60Q
V
DSS
I
D25
R
DS(on)
=
=
=
600 V
20 A
0.35
W
t
rr
攏
250ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
20
80
20
30
1.5
5
V
V
V
V
A
A
A
mJ
J
V/ns
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
-55 ... +150
150
-55 ... +150
W
擄C
擄C
擄C
擄C
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
300
Features
鈥?IXYS advanced low gate charge
process
鈥?International standard packages
鈥?Low gate charge and capacitance
- easier to drive
- faster switching
鈥?Low R
DS (on)
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Molding epoxies meet UL 94 V-0
flammability classification
1.13/10 Nm/lb.in.
6
4
g
g
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
=
250 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25擄C
T
J
= 125擄C
Characteristic Values
Min. Typ.
Max.
600
2.0
4
鹵100
25
1
0.35
V
V
nA
mA
mA
W
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98549A (6/99)
漏 2000 IXYS All rights reserved
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