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IXFN24N100F Datasheet

  • IXFN24N100F

  • HiPerRF Power MOSFETs

  • 2頁(yè)

  • IXYS   IXYS

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Advance Technical Information
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
IXFN 24N100F
V
DSS
I
D25
R
DS(on)
=
=
=
1000 V
24 A
0.39
鈩?/div>
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g,
Low Intrinsic R
g
High dV/dt,
Low t
rr
D
t
rr
鈮?/div>
250 ns
G
S
S
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
J
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Maximum Ratings
1000
1000
鹵20
鹵30
24
96
24
60
3.0
10
600
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
V~
V~
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l
l
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
鈮?/div>
1 mA
t = 1 min
t=1s
-
2500
3000
l
l
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
l
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
l
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
3.0
5.5
鹵200
T
J
= 25擄C
T
J
= 125擄C
V
V
nA
l
l
l
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
l
l
l
100
碌A(chǔ)
3 mA
0.39
鈩?/div>
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
漏 2002 IXYS All rights reserved
98875 (1/02)

IXFN24N100F 產(chǎn)品屬性

  • IXYS

  • N-Channel

  • 1000 V

  • +/- 20 V

  • 24 A

  • 0.39 Ohms

  • Single Dual Source

  • + 150 C

  • SMD/SMT

  • SOT-227B

  • Tube

  • 11 ns

  • - 55 C

  • 600 W

  • 18 ns

  • 10

  • 52 ns

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