IGBT
with optional Diode
High Speed,
Low Saturation Voltage
IXDP 35N60 B
V
CES
= 600 V
= 60 A
IXDH 35N60 B
I
C25
IXDH 35N60 BD1 V
CE(sat) typ
= 2.1 V
C
G
G
C
TO-247 AD
IXDH ...
E
IXDH 35N60 B
IXDP 35N60 B
E
IXDH 35N60 BD1
G
C
E
C (TAB)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
RBSOA
t
SC
(SCSOA)
P
C
T
J
T
stg
Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 20 kW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 90擄C, t
p
=1 ms
V
GE
= 鹵15 V, T
J
= 125擄C, R
G
= 10
W
Clamped inductive load, L = 30 碌H
V
GE
= 鹵15 V, V
CE
= 600 V, T
J
= 125擄C
R
G
= 10
W,
non repetitive
T
C
= 25擄C
IGBT
Diode
Maximum Ratings
600
600
鹵20
鹵30
60
35
70
I
CM
= 110
V
CEK
< V
CES
10
250
80
-55 ... +150
-55 ... +150
300
0.4 - 0.6
0.8 - 1.2
6
V
V
V
V
A
A
A
A
碌s
W
W
擄C
擄C
擄C
Nm
Nm
g
TO-220 AB
IXDP ...
G
C
E
C (TAB)
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
Features
q
q
q
q
q
q
q
q
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Symbol
Conditions
Mounting torque
TO-220
TO-247
q
NPT IGBT technology
low switching losses
low tail current
no latch up
short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
Advantages
q
q
Space savings
High power density
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
3
T
J
= 25擄C
T
J
= 125擄C
1
5
V
V
Typical Applications
q
q
q
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
V
GE
= 0 V
I
C
= 0.7 mA, V
CE
= V
GE
q
q
V
CE
= V
CES
V
CE
= 0 V, V
GE
= 鹵 20 V
I
C
= 35 A, V
GE
= 15 V
0.1 mA
mA
鹵 500 nA
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
2.2
2.7
V
021
漏 2000 IXYS All rights reserved
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