High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 20N120
V
CES
= 1200 V
= 38 A
IXDH 20N120 D1 I
C25
V
CE(sat) typ
= 2.4 V
C
G
G
C
TO-247 AD
G
C
E
IXDH 20N120
E
IXDH 20N120 D1
E
C (TAB)
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
RBSOA
t
SC
(SCSOA)
P
C
T
J
T
stg
Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 20 kW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 90擄C, t
p
= 1 ms
V
GE
= 鹵15 V, T
J
= 125擄C, R
G
= 82
W
Clamped inductive load, L = 30 碌H
V
GE
= 鹵15 V, V
CE
= V
CES
, T
J
= 125擄C
R
G
= 82
W,
non repetitive
T
C
= 25擄C
IGBT
Diode
Maximum Ratings
1200
1200
鹵20
鹵30
38
25
50
I
CM
= 35
V
CEK
< V
CES
10
200
75
-55 ... +150
-55 ... +150
300
0.8 - 1.2
6
V
V
V
V
A
A
A
A
Features
q
q
q
q
q
q
q
q
q
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
Advantages
碌s
W
W
Typical Applications
擄C
q
q
q
Space savings
High power density
擄C
擄C
Nm
g
q
q
q
q
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Symbol
Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1200
4.5
2
6.5
V
V
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
V
GE
= 0 V
I
C
= 0.6 mA, V
CE
= V
GE
V
CE
= V
CES
T
J
= 25擄C
T
J
= 125擄C
1 mA
mA
鹵 500 nA
V
CE
= 0 V, V
GE
= 鹵 20 V
I
C
= 20 A, V
GE
= 15 V
2.4
3
V
031
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