High Voltage BIMOSFET
TM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IXBJ 40N140
IXBJ 40N160
V
CES
I
C25
V
CE(sat)
t
fi
=
=
=
=
1400/1600 V
33 A
7.1 V
40 ns
C
G
E
Symbol
Test Conditions
Maximum Ratings
40N140
40N160
1600
1600
鹵20
鹵30
33
20
40
I
CM
= 40
350
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
擄C
擄C
擄C
擄C
l
TO-268
G
C
E
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
M
d
Weight
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C,
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 22
鈩?
V
CE
= 0.8 V
CES
Clamped inductive load, L = 100 mH
T
C
= 25擄C
1400
1400
C (TAB)
G = Gate
C = Collector
E = Emitter TAB = Collector
Features
l
l
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
1.15/10 Nm/lb.in.
6
g
l
l
Leaded TO-268 package
High Voltage BIMOSFET
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
DS(on)
Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
MOS Gate turn-on
- drive simplicity
Intrinsic diode
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
40N140
40N160
1400
1600
4
T
J
= 25擄C
T
J
= 125擄C
8
400
3
鹵 500
6.2
T
J
= 125擄C
7.1
7.8
V
V
V
碌A(chǔ)
mA
nA
V
V
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 2 mA, V
CE
= V
GE
l
l
l
l
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
= 鹵20 V
I
C
= I
C90
, V
GE
= 15 V
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
CRT deflection
Lamp ballasts
Advantages
l
l
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98662 (10/99)
漏 2000 IXYS All rights reserved
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