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IXBD4410SI Datasheet

  • IXBD4410SI

  • ISOSMART Half Bridge Driver Chipset

  • 11頁(yè)

  • IXYS   IXYS

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IXBD4410
IXBD4411
ISOSMART
TM
Half Bridge Driver Chipset
Type
Description
Package
Temperature Range
IXBD4410PI
IXBD4411PI
IXBD4410SI
IXBD4411SI
Full-Feature Low-Side Driver 16-Pin P-DIP
Full-Feature High-Side Driver 16-Pin P-DIP
Full-Feature Low-Side Driver 16-Pin SO
Full-Feature High-Side Driver 16-Pin SO
-40 to +85擄C
-40 to +85擄C
-40 to +85擄C
-40 to +85擄C
The IXBD4410/IXBD4411 ISOSMART
chipset is designed to control the gates
of two Power MOSFETs or Power
IGBTs that are connected in a half-
bridge (phase-leg) configuration for
driving multiple-phase motors, or used
in applications that require half-bridge
power circuits. The IXBD4410/
IXBD4411 is a full-feature chipset
consisting of two 16-Pin DIP or SO
devices interfaced and isolated by two
small-signal ferrite pulse transformers.
The small-signal transformers provide
greater than 1200 V isolation.
Even with commutating noise ambients
greater than
鹵50
V/ns and up to 1200 V
potentials, this chipset establishes
error-free two-way communications
between the system ground-reference
IXBD4410 and the inverter output-
reference IXBD4411. They incorporate
undervoltage V
DD
or V
EE
lockout and
overcurrent or desaturation shutdown
to protect the IGBT or Power MOSFET
devices from damage.
The chipset provides the necessary
gate drive signals to fully control the
grounded-source low-side power
device as well as the floating-source
high-side power device. Additionally,
the IXBD4410/4411 chipset provides a
negative-going, off-state gate drive
signal for improved turn-off of IGBTs or
Power MOSFETs and a system logic-
compatible status fault output FLT to
indicate overcurrent or desaturation,
and undervoltage V
DD
or V
EE
. During a
status fault, both chipset keep their
respective gate drive outputs off; at
V
EE
.
Features
1200 V or greater low-to-high side
isolation.
Drives Power Systems Operating on
up to 575 V AC mains
dv/dt immunity of greater than
鹵50V/ns
Proprietary low-to-high side level
translation and communication
On-chip negative gate-drive supply
to ensure Power MOSFET or IGBT
turn-off and to prevent gate noise
interference
5 V logic compatible HCMOS inputs
with hysteresis
Available in either the 16-Pin DIP or
the 16-Pin wide-body, small-outline
plastic package
20 ns switching time with 1000 pF
load; 100 ns switching time with
10,000 pF load
100 ns propagation delay time
2 A peak output drive capability
Self shut-down of output in response
to over-current or short-circuit
Under-voltage and over-voltage V
DD
lockout protection
Protection from cross conduction of
the half bridge
Logic compatible fault indication
from both low and high-side driver
Applications
540 V-
1- or 3-Phase Motor Controls
Switch Mode Power Supplies
(SMPS)
Uninterruptible Power Supplies
(UPS)
Induction Heating and Welding
Systems
Switching Amplifiers
General Power Conversion Circuits
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
1

IXBD4410SI 產(chǎn)品屬性

  • 46

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān)

  • ISOSMART™

  • 低端

  • 非反相

  • 110ns

  • 2A

  • 1

  • 1

  • 1200V

  • 10 V ~ 20 V

  • -40°C ~ 85°C

  • 表面貼裝

  • 16-SOIC（0.295"，7.50mm 寬）

  • 16-SOIC

  • 管件

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