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ISL9N308AD3 Datasheet

  • ISL9N308AD3

  • N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A...

  • 11頁

  • FAIRCHILD

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ISL9N308AD3 / ISL9N308AD3ST
June 2002
PWM Optimized
ISL9N308AD3 / ISL9N308AD3ST
N-Channel Logic Level UltraFET
廬
Trench Power MOSFETs
30V, 50A, 8m鈩?/div>
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.0064鈩?(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.010鈩?(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 24nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 8nC
鈥?C
ISS
(Typ) = 2600pF
Applications
鈥?DC/DC converters
D
G
G
D
S
D-PAK
TO-252
(TO-252)
I-PAK
(TO-251AA)
G D S
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) Note 1
I
D
Continuous (T
C
=
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
100
o
C,
25
o
C,
V
GS
= 4.5V) Note 1
52
o
C/W)
V
GS
= 10V, R
胃JC
=
50
48
14
Figure 4
100
0.67
-55 to 175
A
A
A
A
W
W/
o
C
o
Parameter
Ratings
30
鹵20
Units
V
V
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
1.5
100
52
o
C/W
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
N308AD
N308AD
Device
ISL9N308AD3ST
ISL9N308AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75 units
漏2002 Fairchild Semiconductor Corporation
ISL9N308AD3 / ISL9N308AD3ST Rev C

ISL9N308AD3 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 50 A

  • 0.008 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-251

  • Tube

  • 32 ns, 31 ns

  • - 55 C

  • 100 W

  • 67 ns, 40 ns

  • 75

  • 35 ns, 64 ns

ISL9N308AD3相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Dual LDO with Low Noise, Very High PSRR, and Low IQ
    INTERSIL
  • 英文版
    LDO with Low ISUPPLY, High PSRR
    INTERSIL
  • 英文版
    LDO with Low ISUPPLY, High PSRR
    INTERSIL
  • 英文版
    High Current LDO with Low IQ and High PSRR
    INTERSIL
  • 英文版
    Dual LDO with Low Noise, Low IQ, and High PSRR
    INTERSIL
  • 英文版
    Dual LDO with Low Noise, Low IQ, and High PSRR
    INTERSIL
  • 英文版
    Dual LDO with Low Noise, Low IQ, and High PSRR
    INTERSIL
  • 英文版
    150mA Dual LDO with Low Noise, High PSRR, and Low IQ
    INTERSIL [...
  • 英文版
    250mA Single LDO with Low IQ, Low Noise and High PSRR LDO
    INTERSIL [Inter...
  • 英文版
    500mA 4.3MHz Low IQ High Efficiency Synchronous Buck Convert...
    INTERSIL [Inter...
  • 英文版
    600mA Low Quiescent Current 1.6MHz High Efficiency Synchrono...
    INTERSIL
  • 英文版
    600mA Low Quiescent Current 1.6MHz High Efficiency Synchrono...
    INTERSIL [Inter...
  • 英文版
    1.2A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
  • 英文版
    RF PA 1.5A DC/DC Regulator
    INTERSIL [Inter...
  • 英文版
    Charging System Safety Circuit
    INTERSIL
  • 英文版
    Li-ion Battery Charger
    INTERSIL

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