ISL9N307AP3/ISL9N307AS3ST
January 2002
ISL9N307AP3/ISL9N307AS3ST
N-Channel Logic Level PWM Optimized UltraFET廬 Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.006
鈩?/div>
(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.010
鈩?/div>
(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 28nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 10nC
鈥?C
ISS
(Typ) = 3000pF
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
D
Applications
鈥?DC/DC converters
GATE
SOURCE
G
DRAIN
(FLANGE)
S
TO-263AB
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= V, R
胃
JC
=
Parameter
TO-220AB
Ratings
30
鹵
20
75
52
43
o
C/W)
16
Figure 4
100
0.67
-55 to 175
Units
V
V
A
A
A
A
W
W/
o
C
o
C
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
I
D
Thermal Characteristics
R
胃
JC
R
胃
JA
R
胃
JA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1.36
62
43
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
N307AS
N307AP
Device
ISL9N307AS3ST
ISL9N307AP3
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
漏2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
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