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ISL9N306AD3ST Datasheet

  • ISL9N306AD3ST

  • N-Channel Logic Level PWM Optimized UltraFET Trench Power MO...

  • 11頁

  • FAIRCHILD

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ISL9N306AD3 / ISL9N306AD3ST
June 2003
ISL9N306AD3 / ISL9N306AD3ST
N-Channel Logic Level PWM Optimized UltraFET
廬
Trench Power MOSFETs
30V, 50A, 6m鈩?/div>
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.0052鈩?(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.0085鈩?(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 30nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 11nC
鈥?C
ISS
(Typ) = 3400pF
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
G
S
Applications
鈥?DC/DC converters
DRAIN (FLANGE)
D
GATE
SOURCE
TO-252
TO-251
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
100
o
C,
o
Parameter
Ratings
30
鹵20
50
50
o
Units
V
V
A
A
A
A
W
W/
o
C
o
V
GS
= 4.5V)
Continuous (T
C
= 25 C, V
GS
= V, R
胃JC
= 52 C/W)
16
Figure 4
125
0.83
-55 to 175
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
1.2
100
52
o
o
o
C/W
C/W
C/W
Package Marking and Ordering Information
Device Marking
N306AD
N306AD
Device
ISL9N306AD3ST
ISL9N306AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75 units
漏2003 Fairchild Semiconductor Corporation
ISL9N306AD3 / ISL9N306AD3ST Rev. B2

ISL9N306AD3ST 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 50 A

  • 0.0095 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-252AA

  • Reel

  • 30 ns

  • - 55 C

  • 125 W

  • 70 ns

  • 2500

  • 34 ns

ISL9N306AD3ST相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
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    LDO with Low ISUPPLY, High PSRR
    INTERSIL
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    LDO with Low ISUPPLY, High PSRR
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    High Current LDO with Low IQ and High PSRR
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    Dual LDO with Low Noise, Low IQ, and High PSRR
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    150mA Dual LDO with Low Noise, High PSRR, and Low IQ
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  • 英文版
    600mA Low Quiescent Current 1.6MHz High Efficiency Synchrono...
    INTERSIL [Inter...
  • 英文版
    1.2A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
  • 英文版
    RF PA 1.5A DC/DC Regulator
    INTERSIL [Inter...
  • 英文版
    Charging System Safety Circuit
    INTERSIL
  • 英文版
    Li-ion Battery Charger
    INTERSIL

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