IS62LV256
32K x 8 LOW VOLTAGE STATIC RAM
FEATURES
鈥?Access time: 45, 70 ns
鈥?Low active power: 70 mW
鈥?Low standby power
鈥?45 碌W CMOS standby
鈥?Fully static operation: no clock or refresh
required
鈥?TTL compatible inputs and outputs
鈥?Single 3.3V power supply
ISSI
DESCRIPTION
廬
JANUARY 2000
The
ISSI
IS62LV256 is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using
ISSI
's
high-performance CMOS double-metal technology.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation is reduced to
10 碌W (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (CE) input and an active LOW Output Enable
(OE) input. The active LOW Write Enable (WE) controls both
writing and reading of the memory.
The IS62LV256 is pin compatible with other 32K x 8 SRAMs
in 300-mil plastic DIP and SOJ, 330-mil plastic SOP, and
TSOP (Type I) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
256 X 1024
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. 漏 Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. 鈥?1-800-379-4774
Rev. I
01/26/00
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