鈥?/div>
Low standby power: 150 碌W (typical) CMOS
standby
鈥?Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
鈥?Fully static operation: no clock or refresh
required
鈥?TTL compatible inputs and outputs
鈥?Single 5V (鹵10%) power supply
ISSI
DESCRIPTION
廬
MARCH 2002
The
ISSI
IS62C1024L is a low power,131,072-word by 8-bit
CMOS static RAM. It is fabricated using
ISSI
's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields higher
performance and low power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the
device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs,
CE1
and CE2. The active LOW Write
Enable (WE) controls both writing and reading of the
memory.
The IS62C1024L is available in 32-pin plastic SOP and
TSOP (type 1) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
512 X 2048
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. 漏 Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. 鈥?1-800-379-4774
Rev. D
03/05/02
1