IS61LV6416
64K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
鈥?High-speed access time: 8, 10, 12, 15, and 20 ns
鈥?CMOS low power operation
鈥?250 mW (typical) operating
鈥?250 碌W (typical) standby
鈥?TTL compatible interface levels
鈥?Single 3.3V power supply
鈥?Fully static operation: no clock or refresh
required
鈥?Three state outputs
鈥?Data control for upper and lower bytes
鈥?Industrial temperature available
ISSI
OCTOBER 2000
廬
DESCRIPTION
The
ISSI
IS61LV6416 is a high-speed, 1,048,576-bit
static RAM organized as 65,536 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields access times
as fast as 8 ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip
Enable and Output Enable inputs,
CE
and
OE.
The active
LOW Write Enable (WE) controls both writing and reading
of the memory.A data byte allows Upper Byte (UB) and
Lower Byte (LB) access.
The IS61LV6416 is packaged in the JEDEC standard
44-pin 400-mil SOJ, 44-pin TSOP, and 48-pin mini BGA
(6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. 漏 Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
Rev. D
10/20/00
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