IS61C3216B
32K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES
鈥?High-speed access time: 10, 12, 15, and 20 ns
鈥?CMOS low power operation
鈥?450 mW (typical) operating
鈥?250 碌W (typical) standby
鈥?TTL compatible interface levels
鈥?Single 5V 鹵 10% power supply
鈥?I/O compatible with 3.3V device
鈥?Fully static operation: no clock or refresh
required
鈥?Three state outputs
鈥?Industrial temperature available
鈥?Available in 44-pin 400-mil SOJ package and
44-pin TSOP (Type II)
ISSI
廬
DECEMBER 2000
DESCRIPTION
The
ISSI
IS61C3216B is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ISSI
's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design tech-
niques, yields fast access times with low power consumption.
The device is active when CE is HIGH. When CE is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down to 250 碌W
(typical) with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and
OE.
The active LOW Write
Enable (WE) controls both writing and reading of the memory.A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61C3216B is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. 漏 Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. 鈥?1-800-379-4774
Rev. A
12/19/00
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