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IS42S16100C1-7TL Datasheet

  • IS42S16100C1-7TL

  • 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC...

  • 79頁(yè)

  • ISSI   ISSI

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IS42S16100C1
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
FEATURES
鈥?Clock frequency: 200, 166, 143 MHz
鈥?Fully synchronous; all signals referenced to a
positive clock edge
鈥?Two banks can be operated simultaneously and
independently
鈥?Dual internal bank controlled by A11
(bank select)
鈥?Single 3.3V power supply
鈥?2.5V V
DD
option available
鈥?LVTTL interface
鈥?Programmable burst length
鈥?(1, 2, 4, 8, full page)
鈥?Programmable burst sequence:
Sequential/Interleave
鈥?4096 refresh cycles every 64 ms
鈥?Random column address every clock cycle
鈥?Programmable
CAS
latency (2, 3 clocks)
鈥?Burst read/write and burst read/single write
operations capability
鈥?Burst termination by burst stop and
precharge command
鈥?Byte controlled by LDQM and UDQM
鈥?Industrial temperature up to 143 MHz
鈥?Package 400-mil 50-pin TSOP II
鈥?Lead-free package option
ISSI
July 2004
廬
DESCRIPTION
ISSI
鈥檚 16Mb Synchronous DRAM IS42S16100C1 is
organized as a 524,288-word x 16-bit x 2-bank for
improved performance. The synchronous DRAMs
achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge of the clock input.
PIN CONFIGURATIONS
50-Pin TSOP (Type II)
VDD
DQ0
DQ1
GNDQ
DQ2
DQ3
VDDQ
DQ4
DQ5
GNDQ
DQ6
DQ7
VDDQ
LDQM
WE
CAS
RAS
CS
A11
A10
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
GND
DQ15
IDQ14
GNDQ
DQ13
DQ12
VDDQ
DQ11
DQ10
GNDQ
DQ9
DQ8
VDDQ
NC
UDQM
CLK
CKE
NC
A9
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A11
A0-A10
A11
A0-A7
DQ0 to DQ15
CLK
CKE
CS
RAS
Address Input
Row Address Input
Bank Select Address
Column Address Input
Data DQ
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
CAS
WE
LDQM
UDQM
VDD
GND
VDDQ
GNDQ
NC
Column Address Strobe Command
Write Enable
Lower Bye, Input/Output Mask
Upper Bye, Input/Output Mask
Power
Ground
Power Supply for DQ Pin
Ground for DQ Pin
No Connection
Copyright 漏 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. 鈥?www.issi.com 鈥?/div>
1-800-379-4774
Rev. A
07/20/04
1

IS42S16100C1-7TL 產(chǎn)品屬性

  • ISSI

  • 動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器

  • 16 bit

  • 512 Kbit x 16

  • TSOP-50

  • 16 MB

  • 143 MHz

  • 7 ns

  • 3.6 V

  • 3 V

  • 130 mA

  • + 70 C

  • 0 C

  • SMD/SMT

  • 117

IS42S16100C1-7TL相關(guān)型號(hào)PDF文件下載

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    ETC [ETC]
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  • 英文版
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  • 英文版
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  • 英文版
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  • 英文版
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  • 英文版
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  • 英文版
    1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC...
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